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MMBT3906K PNP Epitaxial Silicon Transistor
February 2005
MMBT3906K
PNP Epitaxial Silicon Transistor General Purpose Transistor
3
Marking
2 1
2AK
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Ta = 25C unless otherwise noted
Parameter
Value
-40 -40 -5 -200 350 150
Units
V V V mA mW C
Collector Power Dissipation Storage Temperature
Electrical Characteristics Ta=25C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO ICEX hFE
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain *
Test Condition
IC = -10A, IE = 0 IC = -1.0mA, IB = 0 IE = 10A, IC = 0 VCE = -30V, VEB = -3V VCE = -1V, IC = -0.1mA VCE = -1V, IC = -1mA VCE = -1V, IC = -10mA VCE = -1V, IC = -50mA VCE = -1V, IC = -100mA IC = -10mA, IB = -1mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, VCE = -20V, f = 100MHz VCB= -5V, IE=0, f=1.0MHz IC = -100A, VCE = -5V, RS = 1K f = 10Hz to 15.7KHz VCC = -3V, VBE = -0.5V IC = -10mA, IB1 = -1mA VCC = -3V, IC = -10mA, IB1 = IB2 = -1mA
Min.
-40 -40 -5
Max.
Units
V V V
-50 60 80 100 60 30
nA
300
VCE (sat) VBE (sat) fT Cob NF tON tOFF
Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Current Gain Bandwidth Product Output Capacitance Noise Figure Turn On Time Turn Off Time
-0.25 -0.4 -0.65 250 4.5 4 70 300 -0.85 -0.95
V V V V MHz pF dB ns ns
* Pulse Test: Pulse Width300s, Duty Cycle2%
(c)2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
MMBT3906K Rev. A
MMBT3906K PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-10
1000
VCE = -1V
IC = 10 IB
hFE, DC CURRENT GAIN
100
-1
VBE(sat)
10
-0.1
VCE(sat)
1 -1 -10 -100 -1000
-0.01 -0.1
-1
-10
-100
IC[A], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Output Capacitance
100
Figure 4. Current Gain Bandwidth Product
1000
IE = 0 f = 1MHz
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
VCE = -20V
Cob [pF], CAPACITANCE
10
100
1
0.1 -1 -10 -100
10 -0.1
-1
-10
-100
VCB [V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
2 MMBT3906K Rev. A
www.fairchildsemi.com
MMBT3906K PNP Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-23
0.20 MIN 2.40
0.10
0.40 0.03
1.30
0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 0.03 0.96~1.14 2.90 0.10
0.12 -0.023
+0.05
0.95 0.03 0.95 0.03 1.90 0.03 0.508REF
0.97REF
Dimensions in Millimeters
3 MMBT3906K Rev. A
www.fairchildsemi.com
MMBT3906K PNP Epitaxial Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM
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SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I15
4 MMBT3906K Rev. A
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